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Product Description
Sirenza Microdevices' SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.
SPA-2118
850 MHz 1 Watt Power Amplifier with Active Bias
Product Features * High Linearity Performance:
+20.7 dBm IS-95 CDMA Channel Power at -55 dBc ACP +47 dBm typ. OIP3
VC1 VBIAS RFIN VPC2
Active Bias
RFOUT/ VC2
* On-chip Active Bias Control * High Gain: 33 dB Typ. * Patented High Reliability GaAsHBT Technology * Surface-Mountable Plastic Package Applications * IS-95 CDMA Systems * Multi-Carrier Applications * AMPS, ISM Applications
Symbol f0 P 1dB AC P S 21 VSWR OIP3 NF ICC VCC Rth j-l
Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25C, VCC= 5.0V Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power IS-95 @880 MHz, 885 KHz offset, POUT=20.7 dBm Small Signal Gain, 880 MHz Input VSWR Output Third Order Intercept Point Power out per tone = +14 dBm Noise Figure Device Current
IBIAS = 10mA, IC1 = 70mA, IC2 = 320mA
Units MHz dB m dB c dB dB m dB mA V C/W
Min. 810
Typ. 900 29.0 -55.0
Max. 960
-52.0 34.5
31.5
33.0 1.5:1 47.0 5.0
360 4.75
400 5.0 31
425 5.25
Device Voltage Thermal Resistance (junction - lead), TL = 85C
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 1
http://www.sirenza.com
EDS-102012 Rev F
Preliminary SPA-2118 850 MHz 1 Watt Power Amp.
850-950 MHz Application Circuit Data, Icc=400mA, Vcc=5V, IS-95, 9 Channels Forward
880 MHz Adjacent Channel Power vs. Channel Output Power
-40.0 -45.0 -50.0 -55.0
dBc
-40C 25C 85C
-60.0 -65.0 -70.0 -75.0 -80.0 -85.0 11 12 13 14 15 16 17 18 Power (dBm) 22 Channel Output 19 20 21
dBm
23 24
25
IS-95 CDMA at 880 MHz
T=+25C
+24 dBm +20 dBm
+10 dBm +16 dBm
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 2
http://www.sirenza.com
EDS-102012 Rev F
Preliminary SPA-2118 850 MHz 1 Watt Power Amp.
850-950 MHz Application Circuit Data, ICC=400mA, VCC=5V
Input/Output Return Loss, Isolation vs Frequency
S22
0 -10 -20
dB
T=+25C
40 36
Gain vs. Frequency
-40C 25C 85C
S11
dB
32 28
-30 -40 -50 0.8 0.85 0.9
GHz S12
24 0.95 1 0.8 0.85 0.9
GHz
0.95
1
P1dB vs Frequency
Device Current vs. Source Voltage
600
36 34 32
dBm
Device Current (mA)
-40C 25C 85C
500 400 300 200 100 0
25C -40C 85C
30 28 26 0.8 0.85 0.9
GHz
0.95
1
0
1
2
3
4
5
6
Vcc (V)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 3
http://www.sirenza.com
EDS-102012 Rev F
Preliminary SPA-2118 850 MHz 1 Watt Power Amp. 850 - 950 MHz Schematic
External Connection 82pF
Z=63 , 9.5
Vcc 10uF Tantalum
1000pF
IC2
2.2nH 6.8K
IC1 IBIAS
1 2 3 4 8 7 6 5
39pF
33 nH
Z=50 , 15.1
15pF 1200pF 330 Ohm Vpc
6.8pF
100pF
850 - 950 MHz Evaluation Board Layout
Vcc
C3
Ref. Des. C1 C2
Value 15pF, 5% 82pF, 5% 10uF, 10% 1000pF, 5% 39pF, 5% 1200pF, 5% 6.8pF, 0.5pF 100pF, 5% 2.2nH, 0.3nH 33nH, 5% 6.8K Ohm, 5% 330 Ohm, 5%
Part Number Rohm MCH18 series Rohm MCH18 series AVX TAJB106K020R Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Rohm MCH18 series Toko LL1608-FS series Coilcraft 1008HQ series Rohm MCR03 series Rohm MCR03 series
C4 C2 L1 C1 R1
2012
C3 C4
C5 L2 C8 C6 R2 C7
C5 C6 C7 C8 L1 L2
Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board
R1 R2
Vpc
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 4
http://www.sirenza.com
EDS-102012 Rev F
Preliminary SPA-2118 850 MHz 1 Watt Power Amp.
Pin # 1 2 3 4 5, 6, 7, 8 Function V c1 V bi as RF In V p c2 RF Out/Vc2 Description VC1 is the supply voltage for the first stage transistor. The configuration as shown on application schematic is required for optimum RF performance. Vbias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic. RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic. Vpc2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in the Application Schematic. RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 6).
EPAD
Gnd
Simplified Device Schematic
2
4 2 1
ACTIVE BIAS NETWORK
5-8
ACTIVE BIAS NETWORK
Absolute Maximum Ratings
3
Parameter (Ta = 25C) Max. Supply Current (IC1) at VCC typ. Max. Supply Current (IC2) at VCC typ. Max. Device Voltage (VCC) at Icc typ. Max. RF Input Power
Absolute Limit 150 mA 750 mA 6.0 V 10 dB m +160 C +150 C
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed. The Moisture Sensitivity Level rating for this device is level 1 (MSL-1) based on the JEDEC 22-A113 standard classification. No special moisture packaging/handling is required during storage, shipment, or installation of the devices.
Max. Junction Temp. (TJ) Max. Storage Temp.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: ICCVCC (max) < (TJ - TL)/Rth,j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 5
http://www.sirenza.com
EDS-102012 Rev F
Preliminary SPA-2118 850 MHz 1 Watt Power Amp.
Part Number Ordering Information
Part Number SPA-2118 Devices Per Reel 500 Reel Siz e 7"
Package Outline Drawing (See SMDI MPO-101644 for tolerances, available on our website)
8 7 6 5 .194 [4.93] EXPOSED PAD
.236 [5.994] .155 [3.937]
Lot ID SPA 2118
1 2 3 .045 [1.143] .035 [.889] 4 Beveled Edge
TOP VIEW
BOTTOM VIEW
.050 [1.27]
.016 [.406] .061 [1.549] .008 [.203]
.058 [1.473]
.013 [.33] x 45
.008
.194 [4.928] .003 [.076] SIDE VIEW SEATING PLANE SEE DETAIL A
.155 [3.937]
END VIEW
Recommended Land Pattern
PARTING LINE
0.150 [3.81] Plated-Thru Holes (0.015" Dia, 0.030" Pitch)
.025
0.140 [3.56] 0.300 [7.62]
5 DETAIL A
Machine Screws 0.080 [2.03]
Note: DIMENSIONS ARE IN INCHES [MM]
0.050 [1.27]
0.020 [0.51]
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC 6
http://www.sirenza.com
EDS-102012 Rev F

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